symbol v ds v gs i dm t j , t stg symbol typ max 64 83 89 120 r q jl 53 70 junction and storage temperature range a p d c 1.5 0.96 -55 to 150 t a =70c i d 7.5 6 30 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv 12 gate-source voltage drain-source voltage 20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja ao8814 common-drain dual n-channel enhancement mode field effect transistor features v ds (v) = 20v i d = 7.5 a (v gs = 10v) r ds(on) < 16m w (v gs = 10v) r ds(on) < 18m w (v gs = 4.5v) r ds(on) < 20m w (v gs = 3.6v) r ds(on) < 24m w (v gs = 2.5v) r ds(on) < 34m w (v gs = 1.8v) esd rating: 2500v hbm g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 12 3 4 87 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 general description the ao8814 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directiona l or bi-directional load switch, facilitated by its comm on- drain configuration. alpha & omega semiconductor, ltd.
ao8814 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 10 m a bv gso 12 v v gs(th) 0.5 0.71 1 v i d(on) 30 a 10 13 16 t j =125c 14 18 22 11.5 15 18 m w 13 16.8 20 m w 15 19 24 m w 20 26 34 m w g fs 30 s v sd 0.74 1 v i s 2.5 a c iss 1390 pf c oss 190 pf c rss 150 pf r g 1.5 w q g 15.4 nc q gs 1.4 nc q gd 4 nc t d(on) 6.2 ns t r 11 ns t d(off) 40.5 ns t f 10 ns t rr 15 ns q rr 5.1 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance gate-source breakdown voltage v ds =0v, i g =250ua v gs =3.6v, i d =6a turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.3 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =7.5a gate source charge m w v gs =2.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =7.5a v gs =1.8v, i d =5a v gs =4.5v, i d =7a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =16v, v gs =0v zero gate voltage drain current v ds =0v, v gs =10v gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =7.5a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =7.5a reverse transfer capacitance i f =7.5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 5: feb 2010 alpha & omega semiconductor, ltd.
ao8814 typical electrical and thermal characteristics 0 10 20 30 0 1 2 3 4 5 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1.5v v gs =2v 3v 4v 10v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 0 10 20 30 40 50 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) v gs =4.5v v gs =2.5v v gs =1.8v v gs =10v v gs =3.6v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =7a i d =6a i d =5a v gs =10v i d =7.5a 10 20 30 40 50 60 0 2 4 6 8 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c i d =7.5a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c alpha & omega semiconductor, ltd.
ao8814 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =7.5a 0 400 800 1200 1600 2000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance t on t p d d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =83c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd.
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